Non-thermal plasma gate device

ABSTRACT

A plasma gate device comprises a housing, a gas inlet, first and second dielectrics, and first, second, and third electrodes. The housing includes an internal reactor chamber. The gas inlet receives a source gas that flows to the reactor chamber. The first and second dielectrics are spaced apart from one another, with each dielectric including an upper surface and a lower surface. The two dielectrics are oriented such that the lower surface of the first dielectric faces the upper surface of the second dielectric. The first and second dielectrics form boundaries of the reactor chamber. The first electrode receives a first electric voltage. The second electrode receives a second electric voltage. The first and second electric voltages in combination generate an electric field in the reactor chamber through which the source gas flows creating a positive ion plasma and a cloud of electrons. The third electrode attracts the electrons.

RELATED APPLICATION

The current patent application is a continuation-in-part patentapplication which claims priority benefit, with regard to all commonsubject matter, to U.S. patent application Ser. No. 15/974,025, entitled“NON-THERMAL PLASMA GATE DEVICE”, and filed May 8, 2018, which claimspriority benefit, with regard to all common subject matter, to U.S.Provisional Application No. 62/511,108, entitled “METAL OXIDE PLASMAGATE”, and filed May 25, 2017. The earlier-filed non-provisional andprovisional applications are hereby incorporated by reference in theirentireties into the current application.

BACKGROUND OF THE INVENTION Field of the Invention

Embodiments of the current invention relate to plasma gate devices.

Description of the Related Art

A plasma gate device receives at least one fluid—typically a (source)gas such as oxygen, nitrogen, etc. The plasma gate device may include atleast one pair of spaced apart electrodes which generate an electricfield through which the gas flows. Exposure to the electric fieldcreates a plasma of the gas along with a cloud of electrons. The plasmagenerated by the plasma gate device may be directed to a liquid forapplications such as nitrogen enrichment of water, purification ofwater, and so forth, or a solid for surface treatment of the solid as aprecursor to a manufacturing process.

SUMMARY OF THE INVENTION

An embodiment of the current invention provides a plasma gate devicecomprising a housing, a gas inlet, a first dielectric, a seconddielectric, a first electrode, a second electrode, and a thirdelectrode. The housing includes an internal reactor chamber. The gasinlet is configured to receive a source gas that flows to the reactorchamber. The first and second dielectrics are spaced apart from oneanother with each dielectric including an upper surface and a lowersurface. The two dielectrics are oriented such that the lower surface ofthe first dielectric faces the upper surface of the second dielectric,wherein the first dielectric forms an upper boundary of the reactorchamber and the second dielectric forms a lower boundary of the reactorchamber. The first electrode is in contact with the upper surface of thefirst dielectric, and the second electrode is in contact with the lowersurface of the second dielectric. The first electrode is configured toreceive a first electric voltage, while the second electrode isconfigured to receive a second electric voltage. The first and secondelectric voltages in combination generate an electric field in thereactor chamber through which the source gas flows, creating a positiveion plasma and a cloud of electrons. The third electrode is in contactwith a portion of the upper surface of the second dielectric andpositioned outside the electric field. The third electrode is configuredto receive a third electric voltage to attract the electrons.

Another embodiment provides a plasma gate device comprising a housing, agas inlet, a first electric power supply, a second electric powersupply, a first dielectric, a second dielectric, a first electrode, asecond electrode, and a third electrode. The housing includes aninternal reactor chamber. The gas inlet is configured to receive asource gas that flows to the reactor chamber. The first electric powersupply is configured to supply a positive electric voltage pulse and anegative electric voltage pulse. The second electric power supply isconfigured to supply a direct current (DC) voltage. The first and seconddielectrics are spaced apart from one another with each dielectricincluding an upper surface and a lower surface. The two dielectrics areoriented such that the lower surface of the first dielectric faces theupper surface of the second dielectric, wherein the first dielectricforms an upper boundary of the reactor chamber and the second dielectricforms a lower boundary of the reactor chamber. The first electrode is incontact with the upper surface of the first dielectric, and the secondelectrode is in contact with the lower surface of the second dielectric.The first electrode is configured to receive the negative electricvoltage pulse, and the second electrode is configured to receive thepositive electric voltage. The positive and negative electric voltagepulses in combination generate an electric field in the reactor chamberthrough which the source gas flows creating a positive ion plasma and acloud of electrons. The third electrode in is contact with a portion ofthe upper surface of the second dielectric and positioned outside thefirst electric field. The third electrode is configured to receive theDC voltage to attract the electrons.

Yet another embodiment provides a method of operating a plasma gatedevice including a first electrode, a second electrode, a thirdelectrode, and a reactor chamber in proximity to the electrodes. Themethod comprises receiving a source gas into the reactor chamber;applying a positive electric voltage pulse to the second electrode;applying a negative electric voltage pulse, at roughly the same time asthe positive electric voltage pulse, to the first electrode; applying apositive direct current (DC) electric voltage to the third electrode;applying a positive DC electric voltage to the second electrode afterthe positive electric voltage pulse; and applying approximately zerovolts to the first electrode after the negative electric voltage pulse.

This summary is provided to introduce a selection of concepts in asimplified form that are further described below in the detaileddescription. This summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used to limit the scope of the claimed subject matter. Other aspectsand advantages of the current invention will be apparent from thefollowing detailed description of the embodiments and the accompanyingdrawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

Embodiments of the current invention are described in detail below withreference to the attached drawing figures, wherein:

FIG. 1 is a perspective view of a first end of a plasma gate device,constructed in accordance with various embodiments of the currentinvention, illustrating a housing with a plurality of electrodeconnectors and a plurality of gas inlet connectors;

FIG. 2 is a perspective view of a second, opposing end of the plasmagate device, illustrating the housing with an electrode connector and agas outlet connector;

FIG. 3 is an elevational view of the first end of the housing of theplasma gate device;

FIG. 4 is an elevational view of the second end of the housing of theplasma gate device;

FIG. 5 is a cross-sectional view of the plasma gate device cut along theline 5-5 of FIG. 3, illustrating a plurality of dielectrics and aplurality of electrodes;

FIG. 6 is a cross-sectional view of the plasma gate device cut along theline 6-6 of FIG. 3, illustrating a gas inlet and a gas bypass inlet;

FIG. 7 is a cross-sectional view of the plasma gate device cut along theline 7-7 of FIG. 3, illustrating the connection of connectors toelectrodes;

FIG. 8 is a cross-sectional view of the plasma gate device cut along theline 8-8 of FIG. 4, illustrating the connection of another connector toanother electrode;

FIG. 9 is a schematic block diagram of various components associatedwith a reactor chamber including a plurality of dielectrics and aplurality of electrodes;

FIG. 10 is a schematic block diagram of first and second electric powersupplies electrically connected to various electrodes;

FIG. 11 is a schematic block diagram of an alternative embodiment of thesecond electric power supply;

FIG. 12 is a schematic block diagram of various components associatedwith the reactor chamber of the plasma gate device further illustratinga plurality of electric fields;

FIG. 13 is a plot of voltage versus time for voltages applied to variouselectrodes;

FIG. 14 is a perspective view of a first end of another embodiment ofthe plasma gate device, the device excluding one of the electrodes andits connector;

FIG. 15 is a cross-sectional view of the plasma gate device of FIG. 14cut along a central vertical plane;

FIG. 16 is a schematic block diagram of the reactor chamber componentsof the plasma gate device of FIG. 14 illustrating a liquid flow pathalong a central longitudinal axis;

FIG. 17 is a schematic block diagram of the reactor chamber componentsof yet another embodiment of the plasma gate device illustrating achannel for solids along a central longitudinal axis;

FIG. 18 is a schematic block diagram of the reactor chamber componentsof still another embodiment of the plasma gate device;

FIG. 19 is a listing of at least a portion of the steps of a method ofoperating a plasma gate device;

FIG. 20 is a schematic block diagram of various components associatedwith another embodiment of a reactor chamber including a plurality ofdielectrics and a plurality of electrodes;

FIG. 21 is a plot of voltage versus time for voltages applied to theelectrodes shown in FIG. 20;

FIG. 22 is a schematic block diagram of various components associatedwith yet another embodiment of a reactor chamber including a pluralityof dielectrics and a plurality of electrodes;

FIG. 23 is a plot of voltage versus time for voltages applied to theelectrodes shown in FIG. 22;

FIG. 24 is a schematic block diagram of various components associatedwith still another embodiment of a reactor chamber including a pluralityof dielectrics and a plurality of electrodes; and

FIG. 25 is a plot of voltage versus time for voltages applied to theelectrodes shown in FIG. 24.

The drawing figures do not limit the current invention to the specificembodiments disclosed and described herein. While the drawings do notnecessarily provide exact dimensions or tolerances for the illustratedcomponents or structures, the drawings are to scale as examples ofcertain embodiments with respect to the relationships between thecomponents of the structures illustrated in the drawings.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The following detailed description of the invention references theaccompanying drawings that illustrate specific embodiments in which theinvention can be practiced. The embodiments are intended to describeaspects of the invention in sufficient detail to enable those skilled inthe art to practice the invention. Other embodiments can be utilized andchanges can be made without departing from the scope of the presentinvention. The following detailed description is, therefore, not to betaken in a limiting sense. The scope of the present invention is definedonly by the appended claims, along with the full scope of equivalents towhich such claims are entitled.

In this description, references to “one embodiment”, “an embodiment”, or“embodiments” mean that the feature or features being referred to areincluded in at least one embodiment of the technology. Separatereferences to “one embodiment”, “an embodiment”, or “embodiments” inthis description do not necessarily refer to the same embodiment and arealso not mutually exclusive unless so stated and/or except as will bereadily apparent to those skilled in the art from the description. Forexample, a feature, structure, act, etc. described in one embodiment mayalso be included in other embodiments, but is not necessarily included.Thus, the current technology can include a variety of combinationsand/or integrations of the embodiments described herein.

A plasma gate device 10, constructed in accordance with variousembodiments of the current invention, is shown in FIGS. 1-8. The plasmagate device 10 may broadly comprise a housing 12, a gas inlet 14, a gasbypass inlet 16, a first dielectric 18, a second dielectric 20, a thirddielectric 22, a first electrode 24, a second electrode 26, a thirdelectrode 28, a fourth electrode 30, a reactor chamber 32, and a gasoutlet 34. The plasma gate device 10 may also comprise a plurality ofgaskets or seals, such as O-ring seals, that are positioned at theinterfaces between various components of the device 10. The plasma gatedevice 10 generally receives a gas as an input and provides a plasma oreffluent as an output. The terms “upstream” and “downstream” may be usedhereinafter to describe relative directions or positionings with regardto the flow of gases and plasma utilized or produced by the plasma gatedevice 10. Upstream generally refers to a direction opposing the flow,while downstream generally refers to a direction coinciding with, orcorresponding to, the flow. In addition, terms such as “upper”, “lower”,“outer”, “inner”, etc. may be used with their traditional meanings todescribe relative positionings of various components of the invention.The terms may be used in reference to the figures and the orientationsof components therein. The components may be oriented in other ways andthus, the terms do not limit the scope of the claimed invention.

The housing 12, best seen in FIGS. 1-4, generally retains the componentsof the plasma gate device 10. In exemplary embodiments, the housing 12may be mostly solid, except for the voids described below, and may havea box shape with a first end surface 36, a second end surface 38, andfour side surfaces. The housing 12 may be formed from metals, plastics,ceramics, or the like. In some embodiments, the housing 12 may include aplurality of separately constructed sections which are assembled to formthe housing 12. The sections may be held together with fasteners, suchas screws. The housing 12 includes a center-line axis which extends froma center point of the first end surface 36 to a center point of thesecond end surface 38.

The gas inlet 14, as shown in FIGS. 1, 3, 6, 9, and 12, generallyreceives a source gas from an external source. The source gas istypically a fluid such as a low density gas, such as oxygen, nitrogen,etc., although in some cases, the source gas may be a fluid such as aliquid or material in a liquid state. The gas inlet 14 includes anopening in the first end surface 36 which couples to one or morechannels or passageways that lead to the reactor chamber 32. The gasinlet 14 may couple to attachments, connectors, fittings, couplers, orso forth, such as a gas inlet connector 40 on the first end surface 36.The gas inlet connector 40 may couple to an external gas source toreceive the source gas. The source gas flows through the gas inlet 14 tothe reactor chamber 32.

The gas bypass inlet 16, as shown in FIGS. 1, 3, and 6, generallyreceives atmospheric, ambient gas from the air in the vicinity of theplasma gate device 10. The gas bypass inlet 16 includes an opening inthe first end surface 36 which couples to one or more channels orpassageways that lead to the reactor chamber 32. The gas bypass inlet 16may couple to attachments, connectors, fittings, couplers, or so forth,such as a gas bypass inlet connector 42 on the first end surface 36.Internally, the gas bypass inlet 16 intersects and combines with the gasinlet 14 upstream from the reactor chamber 32.

The first, second, and third dielectrics 18, 20, 22, as shown in FIGS.5-9 and 12, are each formed from non-conductive materials, such asplastics, ceramics, or other dielectric materials, with a highdielectric strength and a high electrical permittivity. In exemplaryembodiments, the first and second dielectrics 18, 20 are each generallyannular, disc-shaped with a central opening forming an inner diameterand a larger outer diameter. The inner diameter of the first dielectric18 is smaller than the inner diameter of the second dielectric 20. And,the outer diameter of the first dielectric 18 is smaller than the outerdiameter of the second dielectric 20. Each dielectric 18, 20, 22 alsoincludes an upper surface and a lower surface. In exemplary embodiments,the third dielectric 22 is also generally annular, disc-shaped with acentral opening forming an inner diameter and a larger outer diameter.The third dielectric 22 includes an upper surface and a lower surfacewith a shoulder formed on the upper surface adjacent to an outer edgethereof. The three dielectrics 18, 20, 22 are positioned within thehousing 12 such that a center of each dielectric 18, 20, 22 lies alongthe center-line axis. The first and second dielectrics 18, 20 arepositioned spaced apart from one another such that a portion of thefirst dielectric 18 overlaps a portion of the second dielectric 20. Inaddition, the lower surface of the first dielectric 18 faces the uppersurface of the second dielectric 20. The space between the firstdielectric 18 and the second dielectric 20 may have a gap distanceranging from approximately 0.002 inches to approximately 0.015 inches.The inner portion of the third dielectric 22 is positioned in the spacebetween the first dielectric 18 and the second dielectric 20. The outerportion of the third dielectric 22, including the shoulder, ispositioned over the second dielectric 20 and outward from the firstdielectric 18.

The first, second, and third electrodes 24, 26, 28 are each formed fromelectrically conductive material including metals such as copper, gold,silver, aluminum, nickel, or the like, or alloys thereof. In exemplaryembodiments, the first, second, and third electrodes 24, 26, 28 areformed as traces or planes of electrically conductive material on onesurface of a printed circuit board—wherein the printed circuit board isformed from insulating or dielectric material, such FR4. In otherembodiments, the first, second, and third electrodes 24, 26, 28 may eachbe formed from thick film metal deposited on ceramic, such as lowtemperature cofired ceramic (LTCC) or the like. In alternativeembodiments, the first, second, and third electrodes 24, 26, 28 may eachbe thin sheets of metal shaped and positioned as described below.

Each electrode 24, 26, 28 electrically connects to attachments,connectors, fittings, couplers, or so forth in order to receive anelectronic signal from an electrical power supply. The first electrode24 may electrically connect to a first electrode connector 44 which ismechanically connected to the first end surface 36. The second electrode26 may electrically connect to a second electrode connector 46 which ismechanically connected to the second end surface 38. The third electrode28 may electrically connect to a third electrode connector 48 which ismechanically connected to the first end surface 36.

In exemplary embodiments, each electrode 24, 26, 28 is generally planar,annular, disc-shaped with a central opening forming an inner diameterand a larger outer diameter. The inner diameter of the first electrode24 is smaller than the inner diameter of the second electrode 26, andthe outer diameter of the first electrode 24 is smaller than the outerdiameter of the second electrode 26. The inner diameter of the secondelectrode 26 is smaller than the inner diameter of the third electrode28, and the outer diameter of the second electrode 26 is smaller thanthe outer diameter of the third electrode 28.

The first, second, and third electrodes 24, 26, 28 are positioned withinthe housing 12 such that a center of each electrode 24, 26, 28 liesalong the center-line axis. The first electrode 24 is positioned incontact with the upper surface of the first dielectric 18. The secondelectrode 26 is positioned in contact with the lower surface of thesecond dielectric 20. The third electrode is positioned in contact withthe upper surface of the second dielectric 20. The first electrode 24 isspaced apart from the second electrode 26, and a portion of the firstelectrode 24 overlaps a portion of the second electrode 26. The thirdelectrode 28 is positioned in the space between the first electrode 24and the second electrode 26. A portion of the third electrode 28overlaps a portion of the second electrode 26—radially outward from thefirst electrode 24 overlap such that there is no overlap of the firstelectrode 24 and the third electrode 28.

In exemplary embodiments, the fourth electrode 30, as shown in FIGS. 5,6, 9, and 12, is formed from electrically conductive material includingmetals such as copper, gold, silver, aluminum, nickel, or the like, oralloys thereof. The fourth electrode 30 is generally disc-shaped with anupper surface and a lower surface, wherein the lower surface may have aconical shape with an apex extending downward. The fourth electrode 30electrically connects to attachments, connectors, fittings, couplers, orso forth in order to receive an electronic signal from an electricalpower supply. The fourth electrode 30 may electrically connect to afourth electrode connector 50 which is mechanically connected to thefirst end surface 36. The fourth electrode 30 is positioned along thecenter-line axis of the housing 12, which places the fourth electrode 30adjacent to, and inward from, the first dielectric 18 and the firstelectrode 24.

The reactor chamber 32, as shown in FIGS. 5, 6, 9, and 12, generallyprovides a space where plasma of the source gas is created. The lowersurface of the first dielectric 18 forms an upper boundary of thereactor chamber 32, while the upper surface of the second dielectric 20forms a lower boundary of the reactor chamber 32. A first end, or entry,of the reactor chamber 32 couples with the gas inlet 14, while a secondopposing end, or exit, couples with the gas outlet 34. Positioned withinthe reactor chamber 32 are a plasma discharge region 52, an electronchannel 54, and a positive ion channel 56. The plasma discharge region52 is the space where a (positive ion) plasma of the source gas iscreated as a result of electrons being stripped from the gas moleculesand charge separation occurs. The electron channel 54 is the space whereelectrons stripped from the source gas may collect. The positive ionchannel 56 is the space where the plasma may be guided.

The gas outlet 34, as shown in FIGS. 2 and 4-6, generally receives theejected plasma ions from the positive ion channel and provides a pathfor them to flow out of the plasma gate device 10. Just before, orwithin the gas outlet 34, the plasma ions may be mixed with, combinedwith, or introduced to another gas, a liquid, or a solid which createsan effluent. The gas outlet 34 is defined by an internal cavity alongthe center-line axis of the housing 12. The gas outlet 34 may couple toattachments, connectors, fittings, couplers, or so forth, such as a gasoutlet connector 58 on the second end surface 38. The gas outletconnector 58 may couple to an external destination which receives theeffluent.

Various electrical power sources and electrical circuitry, as shown inFIG. 10, may be utilized with the plasma gate device 10. The electricalpower sources may be part of the current invention or they may beexternal to the current invention. In an exemplary embodiment, a firstelectric power supply 60 may provide electric voltage and/or electriccurrent and may include a first terminal 62 and a second terminal 64.The first electric power supply 60 may generate a series of positivevoltage and/or current pulses at the first terminal 62 and a series ofnegative voltage and/or current pulses at the second terminal 64. Eachpositive voltage and/or current pulse may be synchronized to occur atroughly the same time as a successive one of the negative voltage and/orcurrent pulses. Each voltage and/or current pulse may have a pulse widthon the order of approximately 100 nanoseconds (ns) and may be generatedevery approximately 200 ns to approximately 1 millisecond (ms)—yieldinga pulse frequency of approximately 1 kilohertz (kHz) to approximately 5MHz. The first electric power supply 60 may also generate a directcurrent (DC) voltage and/or current that is either positive or negativeat the first terminal 62, the second terminal 64, or both terminals 62,64. The first terminal 62 may be electrically connected to the secondelectrode 26 (through the second electrode connector 46). The secondterminal 64 may be electrically connected to the first electrode 24(through the first electrode connector 44). An exemplary embodiment ofthe first electric power supply 60 is also described in U.S. patentapplication Ser. No. 15/664,423, entitled “DEVICE AND METHOD FORGENERATING A HIGH VOLTAGE PULSE”, and filed Jul. 31, 2017. Thereferenced patent application is hereby incorporated by reference intothe current patent application in its entirety.

A second electric power supply 66 may provide electric voltage and/orelectric current and may include a first terminal 68 and a secondterminal 70. The second electric power supply 66 may generate a DCvoltage and/or current that is either positive or negative at the firstterminal 68, the second terminal 70, or both terminals 68, 70. The firstterminal 68 is electrically connected to a resistor in series with theanode of a diode. The cathode of the diode is electrically connected tothe third electrode 28 (through the third electrode connector 48). Thesecond terminal 70 is electrically connected to electrical ground and tothe fourth electrode 30 (through the fourth electrode connector 50).

In alternative embodiments shown in FIG. 11, the third electrode 28 andthe fourth electrode 30 may be electrically connected to separateelectric power supplies. For example, one electric power supply 66A mayinclude a first terminal 72 electrically connected to the resistor inseries with the diode in series with the third electrode 28 and a secondterminal 74 electrically connected to electrical ground. Another powersupply 66B may include a first terminal 76 electrically connected to thefourth electrode 30 and a second terminal 78 electrically connected toelectrical ground. Each of the electric power supplies 66A, 66B maygenerate a DC voltage and/or current that is either positive or negativeat the first terminal 72, 76, the second terminal 74, 78, or bothterminals 72, 74, 76, 78.

The plasma gate device 10 may operate as follows. The source gas may besupplied from an external source and is received by the gas inlet 14.The source gas may be supplied at approximately atmospheric pressure,below atmospheric pressure, or may be pressurized. The source gas mayflow through the gas inlet 14 toward the reactor chamber 32.

Referring to FIG. 12, a plurality of electric fields generated by thevoltages applied to the various electrodes 24, 26, 28 are shown. A firstelectric field 80 is formed between the first electrode 24 and thesecond electrode 26. A second electric field 82 is formed between thesecond electrode 26 and the third electrode 28. A third electric field84 is formed between the first electrode 24 and the third electrode 28.A fourth electric field 86 is formed at the first electrode 24 adjacentto the fourth electrode 30.

Referring to FIG. 13, a plot of voltage versus time illustrates voltagesapplied to the first, second, and third electrodes 24, 26, 28 for aplurality of time periods during a process of generating plasma from asource gas. As shown in FIG. 13, the voltage applied to the firstelectrode 24 is labeled “V1” and is supplied by the first electric powersupply 60. The voltage applied to the second electrode 26 is labeled“V2” and is supplied by the first electric power supply 60. The voltageapplied to the third electrode 28 is labeled “V3” and is supplied by thesecond electric power supply 66. The voltage for the fourth electrode 30is not shown in the plot of FIG. 13 because in exemplary embodiments,the fourth electrode 30 is electrically connected to electrical groundand has an electric voltage value of 0 Volts. First through fifth timeperiods are labeled “T1” through “T5”, respectively. Although the timeperiods T1 through T5 are shown in FIG. 13 as being roughly equal, eachtime period may be of a different length.

During the time period T1, voltage V1 is equal to approximately zerovolts. Voltages V2 and V3 are equal to a positive DC value. As a resultof voltages V1 and V2, the intensity of the first electric field 80 maybe established at a minimum constant level. As a result of voltages V1and V3, the intensity of the second electric field 82 may also beestablished at a minimum constant level, but perhaps less than theintensity of the first electric field 80. Given that the voltages V2 andV3 are equal, the intensity of the third electric field 84 is roughlyzero. The intensity of the fourth electric field 86 may be roughly zerogiven the absence of charged particles, such as the plasma, in the areaof the intersection of the first electrode 24 and the fourth electrode30. A certain volume of the source gas flows into the reactor chamber32.

During the time period T2, voltage V2 receives a high amplitude, shorttime period positive voltage pulse, while voltage V1 receives a highamplitude, short time period negative voltage pulse. Voltage V3 is heldat the positive DC value as in the time period T1. Given the positiveand negative voltage pulses, the intensity of the first electric field80 increases dramatically in a pulse as well, which may strip electronsoff of the atoms and/or molecules of the source gas—resulting in theformation of a positive ion plasma and a cloud of free electrons. Afterthe pulse occurs, the plasma may remain in the plasma discharge region52, while the free electrons may drift to the electron channel 54. Theelectron mobility in the reactor chamber 32 is much higher than the ionmobility. The free electrons may be drawn to the electron channel 54 bythe positive DC voltage V3 applied to the third electrode 28. As atleast a portion of the third electrode 28 is exposed to the freeelectrons in the electron channel 54, the free electrons may actuallyflow into the third electrode 28 and be drawn into the external circuitassociated with electric power supply 66 during the very short pulsetime. The slower moving ions will eventually drift toward the firstdielectric 18 and form or enhance the positive ion channel 56. Thispositive ion channel 56 will persist after time period T2 because thereremain too few electrons in the reactor chamber 32 to neutralize theplasma cloud after time period T2 ends. This action results in an excessof positive ion charge remaining in reaction chamber 32 during timeperiod T3.

During the time period T3, voltages V1 and V2 are allowed to return totheir values from time period T1. That is, voltage V1 returns to a valueof approximately zero volts, while voltage V2 returns to a positive DCvalue. Voltage V3 remains at the same positive DC value it has been atfor time periods T1 and T2. Residual electrons accumulated on thesurface of the second dielectric 20 will disperse by either flowing intothe third electrode 28 or moving toward the positive ion channel 56. Thefourth electrode 30 remains electrically grounded. The positive ions ofthe plasma then pass through the positive ion channel 56 as they arepushed away from each other by coulomb forces as well as by the secondand third electrodes 26, 28 (given the positive charge of the electrodes26, 28) and drawn toward the fourth electrode 30—encountering the fourthelectric field 86. The positive ions of the plasma may drift out of thegas outlet 34. Or, they may be guided toward a target, such as a solid,a liquid, or another gas. This outflow of charge particles may create apressure differential along the plasma discharge region 52.

Time periods T4 and T5 generally repeat the process that occurred intime periods T2 and T3. That is, a high amplitude, short period pulse isapplied to the first and second electrodes 24, 26 which ionizes thesource gas that has flowed into the reactor chamber 32 to repeatedlygenerate plasma and separate charges in the reactor chamber 32. Thepositive and negative charges separate, with the electrons flowingtoward the electron channel 54 and into the third electrode 28 and thepositive ions transitioning from the plasma discharge region 52 towardthe positive ion channel 56. And the process continues, with the actionsof time periods T2 and T3 occurring repeatedly, creating a sequence ofelectric voltage pulses that are applied as desired or indefinitely. Inbetween the pulses, DC voltages may be applied.

In some embodiments, the third electrode 28 may have a negative DCvoltage applied to it at all times—instead of the positive voltagediscussed above. In such embodiments, the third electrode 28 wouldsource, supply, or emit electrons into the electron channel 54. Duringtime period T2 when plasma of the source gas is generated, the electronsmay be infused into the plasma creating a negative ion plasma. Duringtime period T3 and other times, the fourth electrode 30 may have apositive DC voltage applied to it so that it attracts the negative ionplasma.

The following describes some features of the current invention. In someembodiments, ambient, atmospheric air may be pumped in, or may flow in,to the gas bypass inlet 16 such that oxygen may be separated from theair—providing concentrated or enriched oxygen as an output of the plasmagate device 10. A fundamental aspect of the technology is that oncecharge separation is achieved in the plasma, the negative and positivelycharged carriers not only have very different mobilities within theplasma/gas, but that the negatively charged electrons may be adsorbedonto conduction surfaces, such as the third electrode 28, and move intoand through those surfaces while the ions cannot. The ions, regardlessof their charge are confined to the plasma and the surfaces available inand around the plasma, such as the plasma discharge region 52 and thepositive ion channel 56 within the reactor chamber 32. This technologyrecognizes that difference and exploits it.

It should be recognized that free electrons in general are extremelyshort lived. They will accumulate at the reactor chamber 32 surfaces oron the surfaces of neutral particles in the region very rapidly as theirmass is so small and velocity so high that they can move to the mostfavorable (low energy) sites in extremely short time periods(picoseconds). In addition, once absorbed onto a conduction surface,they become part of the free electron cloud in that material that willallow their effective charge to move as an electromagnetic wave near thespeed of light.

Once in the conduction band of a metal, the excess electrons are “bound”by the lower energy state associated with that cloud and are no longer“free” to flow out of the conductor, such as the third electrode 28, asreadily. In is way, the conductor surface in contact with the excesselectron charge of the non-thermal plasma can act like a diode in thesense that electrons are free to move into the material, such as thethird electrode 28, but not so free to move out. As a practical matter,transmission of the electron charge out of the conductor at lowtemperature requires contact with other particles, either neutral fluidparticles or positively charged fluid particles that they can hop tofrom the conductor. Since those larger atoms/molecules move much slowerat the low temperature involved here, there is opportunity for theapplied electric pulses to manipulate the electrons faster than theother materials can react. This is a fundamental aspect of the operationof the plasma gate device 10 and one that future work will hopefullylead to a broader range of application.

By attending to the various surface areas, i.e., making the exposedconduction areas, such as the end surface of the third electrode 28which is exposed to the reactor chamber 32, small relative to the plasmadischarge area, this technology exploits the differences in the natureof the electrical charge—seeking to provide ample opportunity for thefast moving electrons to move out from the discharge cloud to the endsurface of the third electrode 28, and charging the third electrode 28(like a positive-charging electrode strip-line capacitor during the veryshort plasma discharge generating pulse), and then trapping theelectrons there as that pulse ends and the electric field on thatbuilt-in capacitor (created by the overlap of the second electrode 26and the third electrode 28 and having the second electric field 82)changes. This collapse of the charging pulse then directs the storedcharge in the that capacitor to flow out through the external conductorsand the second electric power supply 66.

This “built-in” diode action for the excess electrons generated in theplasma discharge is then transformed into a similar diode action actingto disperse the accumulated positive charge remaining in the dischargegap after the plasma generating pulse ends. As a result, the device whendriven properly, behaves like a “pulsed ion pump” or “pulsed ioncompressor, analogous to a simple diaphragm pump. Here, the “check valveaction” needed to make the flow one directional in a simple diaphragmpump is provided by the mechanisms described above. The result is this“check valve action” finally being provided by the attraction/repulsionforces of the charged particles in the changing electric field. Once thecharge is separated, the additional “compression power” is provided bythe DC drift field which remains after the plasma discharge pulse hasended and acts on the excess stranded positive charge in the dischargegap to sweep it out or “compress” it.

Because the actual plasma generating pulse is very short (˜100 nS), thePulse Firing Frequency (PFF) can still be very high and is only limitedby the power handling capability of the pulse power supply, the delaytime required after the firing pulse ends for recovery of the externaltransformer, and the time it takes for the stranded ions to be swept outof the plasma firing zone. This is typically a relatively short time—onthe order of 200-300 nS. So it is reasonable to expect to drive the PFFup to the 3-5 MHz range. This is fast enough to result in thecompression of significant quantities of ions on a grams per minutescale, even though the amount of charge pumped in each cycle isrelatively small.

Another embodiment of the plasma gate device 100 is shown in FIGS.14-16. The structure of the plasma gate device 100 is substantiallysimilar to the structure of the plasma gate device 10 except that theplasma gate device 100 excludes the fourth electrode 30 and in its placeis a liquid channel 188. The liquid channel 188 may receive a liquid,such as treated or untreated water, a liquid-state fuel, or the like.The plasma gate device 100 may be utilized to create an effluent whichis a mixture of the source gas and the liquid. Applications for theplasma gate device 100 may include creating a nitrogen-enriched waterthat can be used as fertilizer, injection of oxygen ions for destructionof high molecular weight hydrocarbons (proteins and pharmaceuticals) indrinking water; and so forth.

The plasma gate device 100 also includes, among others, a firstdielectric 118, a second dielectric 120, a third dielectric 122, a firstelectrode 124, a second electrode 126, a third electrode 128, a reactorchamber 132, a gas inlet connector 140, a gas bypass inlet connector142, a first electrode connector 144, a second electrode connector 146,a third electrode connector 148, a plasma discharge region 152, anelectron channel 154, a positive ion channel 156, and an effluent outlet134—each of which is substantially similar in structure and operation tothe like-named components of the plasma gate device 10.

The plasma gate device 100 operates and functions in a substantiallysimilar fashion to the plasma gate device 10. Source gas flows throughthe gas inlet and into the reactor chamber 132. A liquid flows throughthe liquid channel 188 adjacent to the exit of the reactor chamber 132.The first and second electric power supplies 60, 66 supply voltages V1,V2, and V3, as shown in FIG. 13, to the electrodes 124, 126, 128.Resulting from the positive and negative voltage pulses, electrons arestripped from the source gas atoms and/or molecules—thereby creating apositive ion plasma. After the pulse, the electrons are attracted to theelectron channel 154 adjacent to the third electrode 128 and may flowinto the third electrode 128. The positive ion plasma may be bothrepelled by the second and third electrodes 126, 128 and attracted bythe first electrode 124 to the positive ion channel 156. The positiveion plasma passes through the positive ion channel 156 and is injectedinto the path of the flowing liquid through the liquid channel 188. Theplasma may bond with at least a portion of the liquid creating aneffluent which may flow out of the liquid channel 188 and be directed toan external destination or target.

Yet another embodiment of the plasma gate device 200 is shown in FIGS.14, 15, and 17. The structure of the plasma gate device 200 issubstantially similar to the structure of the plasma gate device 10except that the plasma gate device 200 excludes the fourth electrode 30and in its place is a solid channel 288. The solid channel 288 mayreceive a solid 290, which may include a flowable or plastic-statesolid, a permeable film or screen, or the like. The plasma gate device200 may be utilized to treat the surface of the solid. For example, ifthe solid is a metal, such as stainless steel, then the plasma gatedevice 200 may be used to apply a passivation layer to the surface. Ifthe solid is a polymer that is used for 3D printing, then the plasmagate device 200 may inject ions into the polymer to improve adhesion orotherwise modify a character of the polymer.

The plasma gate device 200 also includes, among others, a firstdielectric 218, a second dielectric 220, a third dielectric 222, a firstelectrode 224, a second electrode 226, a third electrode 228, a reactorchamber 232, a gas inlet connector 240, a gas bypass inlet connector242, a first electrode connector 244, a second electrode connector 246,a third electrode connector 248, a plasma discharge region 252, anelectron channel 254, a positive ion channel 256, and an outlet 234—eachof which is substantially similar in structure and operation to thelike-named components of the plasma gate device 10.

The plasma gate device 200 operates and functions in a substantiallysimilar fashion to the plasma gate device 10. Source gas flows throughthe gas inlet and into the reactor chamber 232. The solid 290 may be ina flowable state such that it flows along the solid channel 288 or thesolid 290 may be pushed or forced along the solid channel 288. The firstand second electric power supplies 60, 66 supply voltages V1, V2, and V3to the electrodes 224, 226, 228 as shown in FIG. 13. Resulting from thepositive and negative voltage pulses, electrons are stripped from thesource gas atoms and/or molecules—thereby creating a positive ionplasma. After the pulse, the electrons are attracted to the electronchannel 254 adjacent to the third electrode 228 and may flow into thethird electrode 228. The positive ion plasma may be both repelled by thesecond and third electrodes 226, 228 and attracted by the firstelectrode 224 to the positive ion channel 256. The positive ion plasmapasses through the positive ion channel 256 and encounters the surfaceof the solid 290 as the solid 290 moves along the solid channel 288. Thepositive ion plasma may be injected into the solid 290 to improveadhesion of the solid material or may form a passivation layer at thesurface of the solid 290.

Another embodiment of the reactor chamber 332 and the componentssurrounding the reactor chamber 332 for a plasma gate device are shownin FIG. 18. The plasma gate device may also include a housing andconnectors that are similar to those of the plasma gate devices 10, 100,200. Alternatively, the reactor chamber 332 may be incorporated with anyof the plasma gate devices 10, 100, 200 instead of the reactor chamberincluded with each of those devices 10, 100, 200. The components mayinclude a first dielectric 318, a second dielectric 320, a firstelectrode 324, a second electrode 326, a third electrode 328, a fourthelectrode 330, a fifth electrode 334, a plasma discharge region 352, anelectron channel 354, an ion channel 356, an electric power supply 392,and an ion neutralization element 394.

The first and second dielectrics 318, 320 are each formed fromnon-conductive materials, such as plastics, ceramics, or otherdielectric materials, with a high dielectric strength and a highelectrical permittivity. In some embodiments, each dielectric 318, 320may have a rectangular box shape. In other embodiments, each dielectric318, 320 may be generally annular, disc-shaped with a central openingforming an inner diameter and a larger outer diameter. In allembodiments, each dielectric 318, 320 is formed to have an upper surfaceand a lower surface. The first dielectric 318 and the second dielectric320 are positioned spaced apart from one another at opposing sides ofthe reactor chamber 332. In exemplary embodiments, the first dielectric318 is positioned along the top of the reactor chamber 332, while thesecond dielectric 320 is positioned along the bottom of the reactorchamber 332. The lower surface of the first dielectric 318 faces theupper surface of the second dielectric 320. The first and seconddielectrics 318, 320 are also positioned with their centers offset fromone another such that a portion of the first dielectric 318 overlaps aportion of the second dielectric 320.

In alternative embodiments, the first and second dielectrics 318, 320may each be split into two separate dielectric pieces such that thereare four dielectrics. Two dielectrics may be positioned adjacent oneanother along the top of the reactor chamber 332, while two dielectricsmay be positioned adjacent one another along the bottom of the reactorchamber 332.

The first through fifth electrodes 324, 326, 328, 330, 334 are eachformed from electrically conductive material including metals. In someembodiments, each electrode 324, 326, 328, 330, 334 may have arectangular box shape. In other embodiments, each electrode 324, 326,328, 330, 334 may be generally annular, disc-shaped with a centralopening forming an inner diameter and a larger outer diameter. The firstelectrode 324 is in contact with the upper surface of the firstdielectric 318. The second electrode 326 is in contact with the lowersurface of the second dielectric 320. The third electrode 328 is incontact with the lower surface of the second dielectric 320. The fourthelectrode 330 is in contact with the upper surface of the firstdielectric 318. The fifth electrode 334 is in contact with the uppersurface of the second dielectric 320.

The first through fourth electrodes 324, 326, 328, 330, may beelectrically connected to the first and second electric power supplies60, 66 as shown in FIG. 10 and described above. The first and secondelectric power supplies 60, 66 may supply electric voltage and/orelectric current as described above.

The plasma discharge region 352, the electron channel 354, and the ionchannel 356 are all located in the reactor chamber 332 between the firstdielectric 318 and the second dielectric 320.

The plasma discharge region 352 is positioned in the space where thefirst dielectric 318 and the second dielectric 320 overlap one another.In the plasma discharge region 352, a plasma of the source gas iscreated as a result of an electric field applied between the firstelectrode 324 and the second electrode 326. The plasma may have apositive charge or a negative charge. The electron channel 354 ispositioned in the space adjacent to the fifth electrode 334 whereelectrons may be sourced from the fifth electrode 334 or flow into thefifth electrode 334. The ion channel 356 is positioned in the spaceadjacent to the fourth electrode 330 where the plasma may be attractedafter it is created.

The electric power supply 392 includes a first terminal 396 and a secondterminal 398 and may generate either a positive electric voltage or anegative electric voltage at each of the terminals 396, 398. The firstterminal 396 is electrically connected through an optional diode to thefifth electrode 334, while the second terminal 398 is electricallyconnected to the ion neutralization element 394.

The ion neutralization element 394 is an optional component which may bean additional electrode or another material that can hold a charge. Forexample, the ion neutralization element 394 may hold a positive chargeto attract and neutralize negative ions, or the ion neutralizationelement 394 may hold a negative charge to attract and neutralizepositive ions.

The reactor chamber 332 may function as follows. The source gas flowsinto the space between the first and second dielectrics 318, 320.Electric voltages V1, V2, and V3 may be applied to the first throughthird electrodes 324, 326, 328 as shown in FIG. 13. The fourth electrode330 may be electrically grounded or may receive approximately zerovolts. The fifth electrode 334 may have a positive electric voltage or anegative electric voltage applied to it, depending on the charge ofplasma to be created. For example, the fifth electrode 334 may have apositive electric voltage applied to it in order to sink electrons, orreceive electrons, when a positive ion plasma is created. The fifthelectrode 334 may have a negative electric voltage applied to it inorder to source electrons, or supply electrons, when a negative ionplasma is created. As the positive and negative electric voltage pulsesare applied to the second and first electrodes 326, 324 respectively, alarge temporary electric field is generated between the electrodes 324,326 in the plasma discharge region 352. The presence of the largeelectric field charges the plasma with a positive or negative chargedepending on the electric voltage applied to the fifth electrode 334.After the pulses, the voltages V1 and V2 may return to DC values, whichmay differ from those shown in FIG. 13 in order to move the plasmatoward the ion channel 356. At the ion channel 356, the plasma may flowout of the reactor chamber 332, may be used to treat the surface of asolid, may be injected into a liquid stream, etc. If the ionneutralization element 394 is utilized, then the plasma may be attractedto it and be neutralized.

A sequence of electric voltage pulses may be applied to the first andsecond electrodes 324, 326 to repeatedly generate plasma in a similarfashion to the plasma gate devices 10, 100, 200 described above. Inbetween the pulses, DC voltages may be applied to the electrodes 324,326.

FIG. 19 depicts a listing of at least a portion of the steps of a method400 of operating a plasma gate device 10. The steps may be performed inthe order shown in FIG. 19, or they may be performed in a differentorder. Furthermore, some steps may be performed concurrently as opposedto sequentially. In addition, some steps may be optional or may not beperformed. While the method 400 is discussed for operating the plasmagate device 10, the method 400 may also be applied to the plasma gatedevice 100 and the plasma gate device 200.

Referring to step 401, a source gas is received into the reactor chamber32. The source gas may be a low density gas, such as oxygen, nitrogen,etc., or a gas mixture, supplied from an external source and received bythe gas inlet 14 which allows the source gas to flow to the reactorchamber 32.

Referring to step 402, a positive electric voltage pulse is applied tothe second electrode 26. The positive electric voltage pulse may besupplied from the first electric power supply 60. The electric voltagepulse may have a pulse width on the order of approximately 100 ns.

Referring to step 403, a negative electric voltage pulse is applied tothe first electrode 24. The negative electric voltage pulse may besupplied from the first electric power supply 60 at roughly the sametime as the positive electric voltage pulse. The electric voltage pulsemay have a pulse width on the order of approximately 100 ns. Duringsteps 402 and 403, the source gas may flow into the reactor chamber 32.The application of the positive and negative electric voltage pulsescreates a large, but temporary, electric field pulse between the twoelectrodes 24, 26. The source gas is in the space of the reactor chamber32 where the electric field 80 is created. The pulse of the electricfield 80 may strip electrons off of the atoms and/or molecules of thesource gas—resulting in the formation of a positive ion plasma and acloud of free electrons.

Referring to step 404, a positive DC electric voltage is applied to thethird electrode 28. The positive DC voltage may be supplied from thesecond electric power supply 66 and may be supplied before, during, orafter the positive and negative electric voltage pulses are applied. Thefree electrons created by the electric field pulse are attracted to thethird electrode 28 and may flow into the third electrode 28.

Referring to steps 405 and 406, a positive DC electric voltage isapplied to the second electrode 26 after the positive electric voltagepulse, and approximately zero volts is applied to the first electrode 24after the negative electric voltage pulse.

Referring to step 407, the actions of steps 402 and 405 are repeated asdesired or indefinitely. A sequence of positive electric voltage pulsesis applied to the second electrode 26. Between successive pulses, a DCvoltage is applied to the second electrode 26. Each positive electricvoltage pulse may have a pulse width on the order of approximately 100ns. Successive positive electric voltage pulses may be applied at a rateof one every approximately 200 ns to approximately 1 ms.

Referring to step 408, the actions of steps 403 and 406 are repeated asdesired or indefinitely. A sequence of negative electric voltage pulsesis applied to the first electrode 24. Between successive pulses,approximately zero volts is applied to the first electrode 24. Eachnegative electric voltage pulse may have a pulse width on the order ofapproximately 100 ns. Successive negative electric voltage pulses may beapplied at a rate of one every approximately 200 ns to approximately 1ms.

Another embodiment of a reactor chamber 500 and its surroundingcomponents is shown in FIG. 20. The surrounding components may include afirst dielectric 518, a second dielectric 520, a third dielectric 522, afirst electrode 524, a second electrode 526, a third electrode 528, anda fourth electrode 530. Each of these components is substantiallysimilar in structure to the like-named components surrounding thereactor chamber 32, as described above. In addition, the reactor chamber500 may reside, or be retained, in a device such as the plasma gatedevice 10. Furthermore, each of the electrodes 524, 526, 528, 530 may beelectrically connected to a respective electrode connector 44, 46, 48,50, as described above. Also, the reactor chamber 500 may receive asource gas through the gas inlet 14. Compressed neutral gas may exit thereactor chamber 500 through the gas outlet 34.

The components surrounding the reactor chamber 500 differ in structurefrom those with the reactor chamber 32 in that the third electrode 528and the third dielectric 522 are repositioned. The third electrode 528is positioned adjacent to the first dielectric 518 such that at least aportion of the third electrode 528 is in contact with the lower surfaceof the first dielectric 518. The third dielectric 522 may have agenerally annular disc shape and is positioned in contact with a lowersurface of the third electrode 528. In this embodiment, at least aportion of the third electrode 528 is exposed to the reactor chamber500. The third electrode 528 may also be considered a “drift fieldelectrode”.

Referring to FIGS. 20 and 21, the reactor chamber 500 and itssurrounding components may operate as follows. The source gas may flowto the reactor chamber 500 through the gas inlet 14. For theconfiguration of the reactor chamber 500, the source gas may preferablybe formed from atoms or molecules that are capable of forming negativeions when in the presence of an electric field. As the source gas flowsinto and through the reactor chamber 500 following the gas flow path,the first electrode 524 receives voltage V1, the second electrode 526receives voltage V2, the third electrode 528 receives voltage V3, andthe fourth electrode 530 is electrically connected to electrical ground,the electrical ground being provided by a power supply. Alternatively,the fourth electrode 530 may be electrically connected to an adjustableelectric voltage supply, capable of providing positive or negativeelectric voltage. As shown in FIG. 21, voltage V1 includes a sequence ofshort time period, large amplitude positive voltage pulses, voltage V2includes a sequence of short time period, large amplitude negativevoltage pulses, and voltage V3 remains a constant negative DC value. Thepulses of voltage V1 are synchronized to occur at roughly the same timeas the pulses of voltage V2.

During any given pair of pulses, a high-intensity electric field isgenerated between the first electrode 524 and the second electrode 526.The electric field applies energy to at least a portion of the gas, mayprovide charge separation of the gas, and creates a region or cloud ofhigh density, low capacity ions, i.e., a plasma, in the reactor chamber500 between the first electrode 524 and the second electrode 526. Thethird electrode 528, receiving a negative DC voltage and creating adrift electric field, may provide a source of low density, high capacityelectrons, i.e., electron flow, that are positioned in the reactorchamber 500 in the vicinity of the third dielectric 522 and the exposedarea of the third electrode 528, adjacent to the cloud of ions. Theelectrons may be attracted to and/or injected into the ions. Thecombination of the electrons and ions may form a cloud ofnegatively-charged ions. After the pulses have finished, thenegatively-charged ions may flow along the negative ion flow path towardthe gas outlet 34 and the fourth electrode 530. Since the fourthelectrode 530 is electrically grounded, as the negatively-charged ionsflow close thereto, electrons flow out of the ion cloud and into thefourth electrode 530 causing the ions to lose their charge and becomeneutral. The result of this process is a compressed, neutral gas 540flowing out of the reactor chamber 500 and through the gas outlet 34.

The electric voltage pulses are periodically and repeatedly applied tothe first and second electrodes 524, 526, leading to the processdescribed above being periodically and repeatedly performed, whichcreates a relatively steady flow of compressed gas 540 exiting thereactor chamber 500.

The structures of the components surrounding the reactor chamber 500, asshown in FIG. 20, and the components surrounding the reactor chamber 34,as shown in FIG. 9, illustrate the broader concept of a plasma gatedevice 10 which includes first and second electrodes isolated from areactor chamber by first and second dielectrics, respectively, and athird electrode in contact with either the first or second dielectric,wherein a portion of the third electrode is exposed to the reactorchamber. The first and second electrodes receive the first and secondvoltages, respectively. The first and second voltages may each include asequence of positive voltage pulses or negative voltage pulses in orderto create the ion plasma. The third electrode may receive either apositive DC voltage to receive electrons from the plasma and createpositively-charged ions or a negative DC voltage to emit electrons intothe plasma and create negatively-charged ions. The structures alsoinclude a fourth electrode that is electrically connected to electricalground. Being grounded, the fourth electrode generally attempts toneutralize any electrically charged objects in its vicinity. Thus, whenthe positively or negatively charged ion plasma flows toward the fourthelectrode, the plasma is neutralized—creating a compressed, neutral gas.

Another embodiment of a reactor chamber 600 and its surroundingcomponents is shown in FIG. 22. The surrounding components may include afirst dielectric 618, a second dielectric 620, a first electrode 624, asecond electrode 626, a third electrode 628, and a fourth electrode 630.The first dielectric 618, the first electrode 624, and the fourthelectrode 630 are each substantially similar in structure to thelike-named components surrounding the reactor chamber 32, as describedabove. In addition, the reactor chamber 600 may reside, or be retained,in a device such as the plasma gate device 10. Furthermore, each of theelectrodes 624, 626, 628, 630 may be electrically connected to arespective electrode connector 44, 46, 48, 50, as described above. Also,the reactor chamber 600 may receive a source gas through the gas inlet14. Compressed neutral gas may exit the reactor chamber 600 through thegas outlet 34.

The components surrounding the reactor chamber 600 differ in structurefrom those with the reactor chamber 500 as follows. The third dielectricis not included. The second dielectric 620 has an L-shaped crosssection, such that a first portion of the second dielectric 620 isparallel to, and overlapped by a portion of, the first dielectric 618,while a second portion of the second dielectric 620 is orientedtransverse to the first portion and extends away from the firstdielectric 618 toward the gas outlet 34. The second dielectric 620includes an outer surface that faces the reactor chamber 600 and the gasoutlet 34. The second dielectric 620 includes an inner surface thatopposes the outer surface. The second electrode 626 also has an L-shapedcross section with an outer surface that is in contact with at least aportion of the inner surface of the second dielectric 620. The thirdelectrode 628 is positioned along the second, transverse portion of thesecond dielectric 620, in contact with a portion of its outer surface.Thus, the third electrode 628 is positioned downstream from the overlapof the first and second electrodes 624, 626, where an electric field isformed, as discussed below. In addition, the third electrode 628 may beconsidered the drift field electrode.

Referring to FIGS. 22 and 23, the reactor chamber 600 and itssurrounding components may operate as follows. The source gas may flowto the reactor chamber 600 through the gas inlet 14. For theconfiguration of the reactor chamber 600, the source gas may preferablybe formed from atoms or molecules that are capable of forming positiveions when in the presence of an electric field. As the source gas flowsinto and through the reactor chamber 600 following the gas flow path,the first electrode 624 receives voltage V1, the second electrode 626receives voltage V2, the third electrode 628 receives voltage V3, andthe fourth electrode 630 is electrically connected to electrical ground,the electrical ground being provided by a power supply. Alternatively,the fourth electrode 630 may be electrically connected to an adjustableelectric voltage supply, capable of providing positive or negativeelectric voltage. As shown in FIG. 23, voltage V1 includes a sequence ofshort time period, large amplitude negative voltage pulses, voltage V2includes a sequence of short time period, large amplitude positivevoltage pulses, and voltage V3 remains a constant positive DC value. Inother embodiments, the voltage V2 may also have a positive DC voltagevalue in addition to the pulses. The pulses of voltage V1 aresynchronized to occur at roughly the same time as the pulses of voltageV2.

During any given pair of pulses, a high-intensity electric field isgenerated between the first electrode 624 and the second electrode 626.The electric field applies energy to at least a portion of the gas, mayprovide charge separation of the gas, and creates a region or cloud ofhigh density, low capacity ions, i.e., a plasma, in the reactor chamber600 between the first electrode 624 and the second electrode 626. Thethird electrode 628, receiving a positive DC voltage and creating adrift electric field, may provide an attraction for electrons that areseparated from the gas atoms and/or molecules at the time of the voltagepulses. Around the time that the pulses finish, these electrons, havingvery high mobility compared to that of the ions, may flow away from theion cloud, accumulate around the third electrode 628, and flow into thethird electrode 628—which creates a positive charge in the ion cloud.Soon afterwards, the positively-charged ions may be attracted by theaccumulation of electrons around the third electrode 628 and may flow inthat direction, which allows and encourages the positively-charged ionsto flow out of the reactor chamber 600. The quick exiting of thepositively-charged ions from the reactor chamber 600 allows for thevoltage pulses to be applied at a high frequency, compared with thethird electrode 628 being located in other positions. As thepositively-charged ions flow out of the reactor chamber 600 along thepositive ion flow path, they move toward the fourth electrode 630. Sincethe fourth electrode 630 is electrically grounded, as thepositively-charged ions flow close thereto, electrons flow out of thefourth electrode 630 and into the ion cloud causing the ions to losetheir charge and become neutral. The result of this process is acompressed, neutral gas 640 flowing out of the reactor chamber 600 andthrough the gas outlet 34.

The electric voltage pulses are periodically and repeatedly applied tothe first and second electrodes 624, 626, leading to the processdescribed above being periodically and repeatedly performed, whichcreates a relatively steady flow of compressed gas 640 exiting thereactor chamber 600.

Another embodiment of a reactor chamber 700 and its surroundingcomponents is shown in FIG. 24. The surrounding components may include afirst dielectric 718, a second dielectric 720, a first electrode 724, asecond electrode 726, and a third electrode 728. Each of thesecomponents is substantially similar in structure to the like-namedcomponents surrounding the reactor chamber 32, as described above. Inaddition, the reactor chamber 700 may reside, or be retained, in adevice such as the plasma gate device 10. Furthermore, each of theelectrodes 724, 726, 728 may be electrically connected to a respectiveelectrode connector 44, 46, 48, as described above. Also, the reactorchamber 700 may receive a source gas through the gas inlet 14.Compressed neutral gas may exit the reactor chamber 700 through the gasoutlet 34.

The structure of the reactor chamber 700 does not include the thirddielectric 522 and the third electrode 528 that are present with thereactor chamber 500. In addition, a portion of the second dielectric 720is removed, which exposes a portion of the second electrode 726 to thereactor chamber 700. In this regard, the second electrode 726 may beconsidered the drift field electrode. Furthermore, the fourth electrode530 with the reactor chamber 500 is the third electrode 728 with thereactor chamber 700.

Referring to FIGS. 24 and 25, the reactor chamber 700 and itssurrounding components may operate as follows. The source gas may flowto the reactor chamber 700 through the gas inlet 14. For theconfiguration of the reactor chamber 700, the source gas may preferablybe formed from atoms or molecules that are capable of forming positiveions when in the presence of an electric field. As the source gas flowsinto and through the reactor chamber 700 following the gas flow path,the first electrode 724 receives voltage V1, the second electrode 726receives voltage V2, and the third electrode 728 is electricallyconnected to electrical ground. Alternatively, the third electrode 728may be electrically connected to an adjustable electric voltage supply,capable of providing positive or negative electric voltage. As shown inFIG. 25, voltage V1 includes a sequence of short time period, largeamplitude negative voltage pulses, and voltage V2 includes a constantpositive DC offset voltage plus a sequence of short time period, largeamplitude positive voltage pulses. The pulses of voltage V1 aresynchronized to occur at roughly the same time as the pulses of voltageV2.

During any given pair of pulses, a high-intensity electric field isgenerated between the first electrode 724 and the second electrode 726.The electric field applies energy to at least a portion of the gas, mayprovide charge separation of the gas, and creates a region or cloud ofhigh density, low capacity ions, i.e., a plasma, in the reactor chamber700 between the first electrode 724 and the second electrode 726. Duringthe pulses, electrons may be stripped off of the atoms or molecules ofthe source gas. After the pulses, given the positive DC voltage appliedto the second electrode 726 which creates a drift electric field, theelectrons may be attracted to the exposed portion of the secondelectrode 726 and may flow into the second electrode 726. The loss ofelectrons in the ion cloud gives the cloud a net positive charge. Thepositively-charged ions may flow out of the reactor chamber 700 alongthe positive ion flow path toward the third electrode 728. Since thethird electrode 728 is electrically grounded, as the positively-chargedions flow close thereto, electrons flow out of the third electrode 728and into the ion cloud causing the ions to lose their charge and becomeneutral. The result of this process is a compressed, neutral gas flowing740 out of the reactor chamber 700 and through the gas outlet 34.

The electric voltage pulses are periodically and repeatedly applied tothe first and second electrodes 724, 726, leading to the processdescribed above being periodically and repeatedly performed, whichcreates a relatively steady flow of compressed gas 740 exiting thereactor chamber 700.

Although the components surrounding the reactor chamber 700 include thesecond electrode 726 being exposed to the reactor chamber 700, the firstelectrode 724 could alternatively be exposed to the reactor chamber 700.In addition, if the first electrode 724 is exposed to the reactorchamber 700, the first voltage may include a DC offset voltage insteadof the second voltage including the DC offset voltage. Specifically, thefirst voltage may include a negative DC offset voltage. If the firstvoltage includes a negative DC offset voltage, then the first electrode724 emits electrons that are injected into the plasma to createnegatively-charged ions. As the negatively-charged ions flow toward thethird electrode 728, electrons may flow out of the ions and into thethird electrode 728, thereby neutralizing the ions. In variousembodiments, the polarities of the pulses of the first and secondvoltages may be reversed and still generate the electric field to createthe plasma.

The three embodiments of the reactor chambers 500, 600, 700 and theirsurrounding components within the plasma gate device 10 produce acompressed, or high-pressure, gas. The plasma gate device 10 may beutilized in forming a high-vacuum generator with no moving parts. Theplasma gate device 10 may also be utilized for selective ion generationand/or ejection, i.e., a novel form of gas separation. The plasma gatedevice 10 may also find application in oxygen separation from air thatdoes not employ membranes and may be incorporated in the non-thermalplasma generator itself, for use in ozone generation.

Although the invention has been described with reference to theembodiments illustrated in the attached drawing figures, it is notedthat equivalents may be employed and substitutions made herein withoutdeparting from the scope of the invention as recited in the claims.

Having thus described various embodiments of the invention, what isclaimed as new and desired to be protected by Letters Patent includesthe following:
 1. A plasma gate device comprising: a housing includingan internal reactor chamber; a gas inlet configured to receive a sourcegas that flows to the reactor chamber; a first dielectric and a seconddielectric spaced apart from one another, each dielectric including anupper surface and a lower surface, the two dielectrics oriented suchthat the lower surface of the first dielectric faces the upper surfaceof the second dielectric, wherein the first dielectric forms an upperboundary of the reactor chamber and the second dielectric forms a lowerboundary of the reactor chamber; a first electrode in contact with theupper surface of the first dielectric and a second electrode in contactwith the lower surface of the second dielectric, the first electrodeconfigured to receive a first electric voltage, the second electrodeconfigured to receive a second electric voltage, the first and secondelectric voltages in combination generating an electric field in thereactor chamber through which the source gas flows creating a plasma;and a third electrode in contact with either the first dielectric or thesecond dielectric, and including a portion exposed to the reactorchamber, the third electrode configured to receive a third electricvoltage either to emit electrons into the plasma to createnegatively-charged ions or to receive electrons from the plasma tocreate positively-charged ions.
 2. The plasma gate device of claim 1,further comprising a fourth electrode positioned adjacent to the firstdielectric, the fourth electrode electrically connected to an electricvoltage supply and configured to either receive electrons from thenegatively-charged ions to create a compressed, neutral gas or emitelectrons into the positively-charged ions to create a compressed,neutral gas.
 3. The plasma gate device of claim 1, further comprising athird dielectric positioned to cover a first portion of the thirdelectrode and leave a second portion of the third electrode exposed tothe reactor chamber.
 4. The plasma gate device of claim 1, wherein thefirst electric voltage includes a sequence of short time period, largeamplitude positive voltage pulses.
 5. The plasma gate device of claim 1,wherein the first electric voltage includes a sequence of short timeperiod, large amplitude negative voltage pulses.
 6. The plasma gatedevice of claim 1, wherein the second electric voltage includes asequence of short time period, large amplitude negative voltage pulses.7. The plasma gate device of claim 1, wherein the second electricvoltage includes a sequence of short time period, large amplitudepositive voltage pulses.
 8. The plasma gate device of claim 1, whereinthe third electric voltage includes a constant negative DC voltage. 9.The plasma gate device of claim 1, wherein the third electric voltageincludes a constant positive DC voltage.
 10. A plasma gate devicecomprising: a housing including an internal reactor chamber; a gas inletconfigured to receive a source gas that flows to the reactor chamber; afirst dielectric and a second dielectric spaced apart from one another,the first dielectric including an upper surface and a lower surfacefacing the reactor chamber, the second dielectric having an L-shapedcross section with a first portion parallel to the first dielectric anda second portion transverse to the first portion, the second dielectricincluding an outer surface facing the reactor chamber and an innersurface opposing the outer surface; a first electrode in contact withthe upper surface of the first dielectric and a second electrode havingan L-shaped cross section and in contact with the inner surface of thesecond dielectric, the first electrode configured to receive a firstelectric voltage, the second electrode configured to receive a secondelectric voltage, the first and second electric voltages in combinationgenerating an electric field in the reactor chamber through which thesource gas flows creating a positive ion plasma and a cloud ofelectrons; and a third electrode in contact with the second portion ofthe outer surface of the second dielectric and exposed to the reactorchamber, the third electrode configured to receive a third electricvoltage to accept electrons from the plasma to create positively-chargedions.
 11. The plasma gate device of claim 10, further comprising afourth electrode positioned adjacent to the first dielectric, the fourthelectrode electrically connected to an electric voltage supply andconfigured to emit electrons into the positively-charged ions to createa compressed, neutral gas.
 12. The plasma gate device of claim 10,wherein the first electric voltage includes a sequence of short timeperiod, large amplitude negative voltage pulses.
 13. The plasma gatedevice of claim 10, wherein the second electric voltage includes asequence of short time period, large amplitude positive voltage pulses.14. The plasma gate device of claim 10, wherein the third electricvoltage includes a constant positive DC voltage.
 15. A plasma gatedevice comprising: a housing including an internal reactor chamber; agas inlet configured to receive a source gas that flows to the reactorchamber; a first dielectric and a second dielectric spaced apart fromone another, each dielectric including an upper surface and a lowersurface, the two dielectrics oriented such that the lower surface of thefirst dielectric faces the upper surface of the second dielectric,wherein the first dielectric forms an upper boundary of the reactorchamber and the second dielectric forms a lower boundary of the reactorchamber; a first electrode in contact with a portion of the uppersurface of the first dielectric and a second electrode in contact with aportion of the lower surface of the second dielectric such that either aportion of the first electrode or a portion of the second electrode isexposed to the reactor chamber, the first electrode configured toreceive a first electric voltage, the second electrode configured toreceive a second electric voltage, the first and second electricvoltages in combination generating an electric field in the reactorchamber through which the source gas flows creating a plasma.
 16. Theplasma gate device of claim 15, wherein either the first voltage or thesecond voltage includes a DC offset to allow the first electrode or thesecond electrode either to emit electrons into the plasma to createnegatively-charged ions or to receive electrons from the plasma tocreate positively-charged ions.
 17. The plasma gate device of claim 16,further comprising a third electrode positioned adjacent to the firstdielectric, the third electrode electrically connected to an electricvoltage supply and configured to either receive electrons from thenegatively-charged ions to create a compressed, neutral gas or emitelectrons into the positively-charged ions to create a compressed,neutral gas.
 18. The plasma gate device of claim 16, wherein the DCoffset includes either a positive DC voltage for receiving electronsfrom the plasma or a positive DC voltage for emitting electrons into theplasma.
 19. The plasma gate device of claim 15, wherein the firstelectric voltage includes either a sequence of short time period, largeamplitude positive voltage pulses or a sequence of short time period,large amplitude negative voltage pulses.
 20. The plasma gate device ofclaim 15, wherein the second electric voltage includes either a sequenceof short time period, large amplitude positive voltage pulses or asequence of short time period, large amplitude negative voltage pulses.